Process for manufacturing a plug-diode mask ROM

Fishing – trapping – and vermin destroying

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H01L 21329

Patent

active

054419077

ABSTRACT:
A method of manufacture of a Mask ROM on a semiconductor substrate comprises formation of a first plurality of conductor lines in a first array. A dielectric layer is formed upon the device with a matrix of openings therein in line with the first array. The openings expose the surface of the first conductor lines. Semiconductor diodes are formed in the matrix of openings in contact with the first conductor lines. A second plurality of conductor lines are formed on the surface of the dielectric layer in a second array of conductor lines orthogonal to the first plurality of conductor lines in the first array. A second plurality of conductor lines is aligned with the matrix and is in contact with the upper ends of the semiconductor diodes.

REFERENCES:
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patent: 4219836 (1980-08-01), McElroy
patent: 4646266 (1987-02-01), Ovshinsky et al.
patent: 4727409 (1988-02-01), Conner et al.
patent: 4859633 (1989-08-01), Bayraktaroglu
patent: 5272370 (1993-12-01), French

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