Method for forming a carbon doped silicon semiconductor device h

Details Method for forming a carbon doped silicon semiconductor device h Method for forming a carbon doped silicon semiconductor device h

1994-06-10

1995-08-15

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437126, 437133, 437162, H01L 21331

Patent

active

054419018

ABSTRACT:
A IV-IV semiconductor device having a narrowed bandgap characteristic compared to silicon and method is provided. By incorporating carbon into silicon at a substitutional concentration of between 0.5% and 1.1%, a semiconductor device having a narrowed bandgap compared to silicon and good crystalline quality is achieved. The semiconductor device is suitable for semiconductor heterojunction devices that use narrowed bandgap regions.

REFERENCES:
patent: 4885614 (1989-12-01), Furukawa et al.
patent: 5212101 (1993-05-01), Canham et al.
patent: 5323031 (1994-06-01), Shoji et al.

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