Fishing – trapping – and vermin destroying
Patent
1993-02-12
1995-08-15
Fourson, George
Fishing, trapping, and vermin destroying
437 62, H01L 2176
Patent
active
054418992
ABSTRACT:
A polysilicon or amorphous Si layer is formed on a surface of a silicon substrate. Oxygen ions are implanted into the silicon substrate through the polysilicon layer, and an SiO.sub.2 film is formed in the silicon substrate at a position in a prescribed depth from the surface of silicon substrate. A heat treatment is performed to a silicon layer between the polysilicon layer and the SiO.sub.2 film, thereby providing an SOI layer with improved crystal quality.
REFERENCES:
Jastrzebski, L., et al, "The Effect of 1300.degree.-1380.degree. C. . . . CMOS/SIMOX Devices" IEEE Electron Device Letters, vol. 9, No. 3, Mar. 1988.
"Dislocation Formation Related with High Oxygen Dose Implantation on Silicon", by J. Stoemenos et al, J. Appl. Phys., vol. 69, No. 2, Jan. 15, 1991, pp. 793-802.
"The Reduction of Dislocations in Oxygen Implanted Silicon-On-Insulator Layers by Sequential Implantation and Annealing", by Dale Hill et al, J. Appl. Phys., vol. 63, No. 10, May 15, 1988, pp. 4933-4936.
"Formation of Low Dislocation Density Silicon-On-Insulator by a Single Implantation and Annealing", by M. K. El-Ghor et al, Appl. Phys. Lett., vol. 57, No. 2, Jul. 9, 1990, pp. 156-158.
Nakai Tetsuya
Nishimura Tadashi
Yamaguchi Yasuo
Fourson George
Mitsubishi Denki & Kabushiki Kaisha
Mitsubishi Materials Corporation
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