Logic circuit with enhancement type FET and Schottky gate

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

307450, 307478, 3074821, H03K 19017, H03K 19094

Patent

active

053369491

ABSTRACT:
A logic circuit comprising an inverter which includes a load element connected at its one end to a high-potential power supply, an enhancement type N-channel field-effect transistor having a Schottky gate, the transistor being connected at its drain to another end of the load element and at its source to a low-potential power supply, an input terminal, and a gate-current control unit having negative resistance characteristic, the unit being provided between the input terminal and a gate of the enhancement type N-channel field-effect transistor for controlling a gate current that flows through the enhancement type N-channel field-effect transistor.

REFERENCES:
patent: 4145624 (1979-03-01), Upadhyayula
patent: 4639621 (1987-01-01), Ikawa et al.
patent: 4724342 (1988-02-01), Sato et al.
patent: 4853561 (1989-08-01), Gravrok
patent: 4931669 (1990-06-01), Higashisaka

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Logic circuit with enhancement type FET and Schottky gate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Logic circuit with enhancement type FET and Schottky gate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Logic circuit with enhancement type FET and Schottky gate will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-218021

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.