Modulation-doped photodetector

Details Modulation-doped photodetector Modulation-doped photodetector

1987-01-12

1988-04-19

James, Andrew J.

357 16, 357 22, H01L 2980, H01L 3110, H01L 2940, H01L 2914

Patent

active

047393858

ABSTRACT:
A modulation-doped field effect photodetector has a fast response time.

REFERENCES:
patent: 4075651 (1978-02-01), James
patent: 4424525 (1984-01-01), Mimura
patent: 4450462 (1984-05-01), Nuyen
patent: 4455564 (1984-06-01), Delagebeaudeuf et al.
Pan, Proceed. of the SPIE, vol. 150, Laser & Fiber Optics Comm., 1978, San Diego, Ca., 28, 29, Aug. 1978, pp. 175-184.
Arai et al., Jap. Jour. of App. Phys., vol. 19, 1980, Suppl. 19-1, pp. 411-414.
T. Sugeta et al., "High Speed Photoresponse Mechanism of a GaAs-MESFET," Japanese Journal of Applied Physics, vol. 19, No. 1, Jan. 1980, pp. L27-L29.
J. C. Gammel et al., "The OPFET: A New High Speed Optical Detector," International Electron Devices Meeting, Washington, D.C., Dec. 4-6, 1978, pp. 120-123.
C. Baack et al., "GaAs MESFET: A High-Speed Optical Detector," Electronics Letters, vol. 13, No. 7, Mar. 31, 1977, p. 193.

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