Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1994-01-03
1995-08-15
Weisstuch, Aaron
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
20419224, 505475, C23C 1434, H01L 3924
Patent
active
054416230
ABSTRACT:
A process for making high temperature superconducting oxide films comprising using a sintered body of Y--Ba--Cu--O or Bi--Sr--Ca--Cu--O oxide as a sputtering target and using a mixture of argon and oxygen as a sputtering gas, forming glow discharge between the substrate and the target under a pressure of 0.5-2.5 torr and at a sputtering current density of 5-35 mA/cm.sup.2, and then cooling the substrate after the oxide film has been grown to a desired thickness. The critical temperature of the in-situ produced superconducting oxide film of Y--Ba--Cu--O is 90 K. and that of Ba--Sr--Ca--Cu--O is 80 K.
An apparatus for the preparation of high temperature superconducting oxide films is also provided. The apparatus for in-situ making such high temperature superconducting oxide film is easy to heat the substrate and control its temperature without problems of conventional deposition methods.
REFERENCES:
patent: 5154811 (1992-10-01), Nishibori
R. J. Lin et al., "In situ growth of superconducting YBa.sub.2 Cu.sub.3 O.sub.7-x thin films by hot-wall sputtering process", Appl. Phys. Lett., vol. 62, pp. 105-107 (Jan. 1993).
Industrial Technology Research Institute
Weisstuch Aaron
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