Method of fabricating semiconductor integrated circuit device ut

Details Method of fabricating semiconductor integrated circuit device ut Method of fabricating semiconductor integrated circuit device ut

1980-05-21

1982-08-31

Rutledge, L. Dewayne

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 148175, 148187, 156612, 156613, 156647, 156657, 156662, 357 20, 357 22, 357 50, 357 55, 357 56, 357 60, H01L 21205, H01L 21302

Patent

active

043465137

ABSTRACT:
A method of fabricating a semiconductor integrated circuit device wherein a substrate having a particular crystallographic orientation is selectively etched so as to form surface depressions of different depths. An epitaxial layer is grown from a Si--H--Cl system on the surface of the substrate having the surface depressions formed therein. The epitaxial layer is grown under conditions effective to achieve faster lateral growth than vertical growth so as to form the epitaxial layer with regions of three different thicknesses. Subsequently, additional regions of the semiconductor integrated circuit are formed in the epitaxial layer regions of different thicknesses so as to complete the device.

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