SOI actuators and microsensors

Electricity: electrical systems and devices – Electrostatic capacitors – Variable

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73718, 29 2541, H01G 700

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active

054900344

ABSTRACT:
The present invention relates to the fabrication of diaphragm pressure sensors utilizing silicon-on-insulator technology where recrystallized silicon forms a diaphragm which may incorporate electronic devices used in monitoring pressure. The diaphragm is alternatively comprised of a silicon nitride having the necessary mechanical properties with a recrystallized silicon layer positioned thereon to provide sensor electronics.

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