Semiconductor structure and method for fabricating the same

Details Semiconductor structure and method for fabricating the same Semiconductor structure and method for fabricating the same

1992-11-18

1994-08-09

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257643, 257759, 257750, 257751, 437192, 437203, 437235, H01L 2348, H01L 2946, H01L 2954, H01L 2962

Patent

active

053369297

ABSTRACT:
A semiconductor structure according to the present invention includes a diffusion preventing layer for preventing a diffusion of a brazing metal layer, for instance, Au/In. The structure is interconnected to another structure by brazing.

REFERENCES:
patent: 4753709 (1988-06-01), Welch et al.
patent: 4827326 (1989-05-01), Altman et al.
patent: 4989063 (1991-01-01), Kolesar, Jr.
patent: 5010389 (1991-04-01), Gansauge et al.
K. Kajiyana et al., "Tungsten Plug-In Wiring Structure For High Density Three Dimensional Devices," 1991 VMIC Conference, Jun. 11-12, pp. 130-136.

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