PIN semiconductor photoelectric conversion device with two oxide

Details PIN semiconductor photoelectric conversion device with two oxide PIN semiconductor photoelectric conversion device with two oxide

1983-05-24

1985-12-17

James, Andrew J.

357 59, 357 2, 357 30, H01L 2912

Patent

active

045595526

ABSTRACT:
A PIN type semiconductor photoelectric conversion device is provided with a non-single-crystal semiconductor laminate member which comprises a first non-single-crystal semiconductor layer of a first conductivity, on I-type second non-single-crystal semiconductor layer and a third non-single-crystal semiconductor layer of a second conductivity type, and first and second electrodes which make ohmic contact with the first and third non-single-crystal semiconductor layers, respectively.
The first non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member is formed by a non-single-crystal semiconductor layer on the side of incidence of light. And the second electrode is formed by a reflective electrode.

REFERENCES:
patent: 4401840 (1983-08-01), Chitre
patent: 4433202 (1984-02-01), Maruyama et al.
patent: 4434318 (1984-02-01), Gibbons
patent: 4442310 (1984-04-01), Carlson et al.
Carlson et al., "Amorphous Silicon Solar Cell," Applied Physics Letters, vol. 28, No. 11, Jun. 1976, pp. 671-673.

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