Semiconductor device

Details Semiconductor device Semiconductor device

1982-11-24

1985-12-17

Edlow, Martin H.

357 237, 357 15, 357 16, 357 22, H01L 2978

Patent

active

045595470

ABSTRACT:
The semiconductor device of the present invention is characterized by a device consisting of at least a heterojunction formed by the first semiconductor layer and the second semiconductor layer where the forbidden band gap of the said first semiconductor is smaller than that of the said second semiconductor, at least one pair of electrode regions connected electronically to the said first semiconductor and a means to control the carrier density in the said first semiconductor layer where the impurities are not included effectively in the region in the first semiconductor under the means to control the carriers and are included in the region adjacent to the said one pair of electrodes. The density of the impurities in these region are preferably be larger than 10.sup.16 cm.sup.-3.

REFERENCES:
patent: 4157556 (1979-06-01), Decker et al.
patent: 4236166 (1980-11-01), Cho et al.
patent: 4424525 (1984-01-01), Mimura
patent: 4455564 (1984-06-01), Delagebeaudeuf
patent: 4471366 (1984-09-01), Delagebeaudeuf et al.

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