Insulated gate semiconductor device with improved short-circuit

Details Insulated gate semiconductor device with improved short-circuit Insulated gate semiconductor device with improved short-circuit

1994-03-07

1996-02-06

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257341, H01L 2974

Patent

active

054897882

ABSTRACT:
In an insulated gate semiconductor device, a loss is suppressed and a short-circuit tolerance as well as a latch-up tolerance are improved. A saturation current I.sub.CE (sat) and a short-circuit tolerance tw are reduced without much influencing a collector-emitter saturation voltage V.sub.CE (sat) by setting a sheet resistance of an n-type emitter region 4 at a large value. When the sheet resistance is in the range between 40.OMEGA./.quadrature. and 150.OMEGA./.quadrature., 10 .mu.sec or more of the short-circuit tolerance, which is practically sufficient, is ensured while the collector-emitter saturation voltage V.sub.CE (sat) is suppressed to practically small 2.4 V or less. Both the collector-emitter saturation voltage V.sub.CE (sat) and the saturation current I.sub.CE (sat) are restrained small, thereby realizing an enhanced short-circuit tolerance.

REFERENCES:
patent: 4466176 (1984-08-01), Temple
patent: 5023191 (1991-06-01), Sakurai
patent: 5170239 (1992-12-01), Hagino
patent: 5286984 (1994-02-01), Nakagawa et al.
patent: 5321281 (1994-06-01), Yamaguchi et al.
Patent Abstracts of Japan, vol. 13, No. 304 (E-786), Jul. 12, 1989, JP-A-1 081367, Mar. 27, 1989.
Patent Abstracts of Japan, vol. 14, No. 82 (E-889) (4025), Feb. 15, 1990, JP-A-1 293669, Nov. 27, 1989.
Toshiba Review, No. 161, Sep. 1987, pp. 34-37, A. Nakagawa, et al., "1,800 V Bipolar-Mode MOSFETs (IGBT)".

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