Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device
Patent
1993-04-08
1994-04-19
LaRoche, Eugene R.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
257189, 257200, 257184, 257442, 257459, 257459, 257444, H01L 3110
Patent
active
053048245
ABSTRACT:
A low doped semiconductive layer is formed on a semiconductor substrate of a highly doped first conductivity type, and a first region of a highly doped second conductivity type is selectively formed at a portion of the semiconductive layer. In a top-incidence type photo-sensing device having a pn junction area of the above structure as a photo-sensing region, the first region is surrounded by a second region of the second conductivity type formed at a portion of the semiconductor layer. The second region has the same or a larger depth as that of the first region. Thus, even if light is directed to the outside of the photo-sensing region, extra charges generated therein are absorbed by the second region and the flow of extra charges into the photo-sensing region is prevented.
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LaRoche Eugene R.
Nguyen Viet Q.
Sumitomo Electric Industries Ltd.
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