Method of fabricating semiconductor device having polysilicon re

Details Method of fabricating semiconductor device having polysilicon re Method of fabricating semiconductor device having polysilicon re

1994-05-23

1996-02-06

Fourson, George

Fishing, trapping, and vermin destroying

437 47, 437 59, 437918, 148DIG136, 148DIG146, 257350, 257358, 257363, 257380, 257381, 257360, H01L 2170

Patent

active

054895472

ABSTRACT:
A semiconductor device having a p type polysilicon resistor (56) with a moderate sheet resistance and low temperature coefficient of resistance is formed by a double-level polysilicon process. The process also produces n and p-channel transistors (44, 50), a capacitor having upper and lower n type polysilicon capacitor plates (36, 26), an n type polysilicon resistor (32) having a high sheet resistance, and an n type resistor (34) having a low sheet resistance. The p type doping used to form the source/drain regions (48) of p-channel transistor (50) counterdopes n type second level polysilicon to form p type polysilicon resistor (56) without effecting capacitor plates (36, 26) or the n type resistors (32, 34).

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