Method of forming CMOS devices using independent thickness space

Details Method of forming CMOS devices using independent thickness space Method of forming CMOS devices using independent thickness space

1995-05-24

1996-02-06

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 34, 437 48, 437 52, 437 56, H01L 218242

Patent

active

054895464

ABSTRACT:
NMOS and PMOS devices are formed in a split-polysilicon CMOS process using independent thickness transistor gate spacers, and using a silicon nitride layer as a mask for the p-channel region during an n+ source/drain implant step of the n-channel region. The p-channel spacer is formed significantly thicker than the n-channel spacer, thereby reducing lateral diffusion of p-type dopant species under the p-channel gate and avoiding short channel effects to improve device reliability and performance. P-channel transistor junction depth and lateral diffusion is further reduced by performing an n-channel arsenic source/drain implant before the p-channel source/drain boron difluoride implant, although the p-channel transistor gate is etched before the n-channel gate. Moreover, since the p-channel transistor gate is etched before the n-channel gate, the p-channel gate sidewalls are reoxidized as well as the n-channel gate sidewalls for improved gate oxide integrity.

REFERENCES:
patent: 5021353 (1991-06-01), Lowrey et al.
patent: 5026657 (1991-06-01), Lee et al.
patent: 5030585 (1991-07-01), Gonzalez et al.
patent: 5032530 (1991-07-01), Lowrey et al.
patent: 5134085 (1992-07-01), Gilgen et al.
patent: 5272367 (1993-12-01), Dennison et al.
patent: 5366918 (1994-11-01), Yang

Affiliated with

Also associated with

Rating

Method of forming CMOS devices using independent thickness space does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming CMOS devices using independent thickness space, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming CMOS devices using independent thickness space will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2174790