Method of manufacturing an integrated circuit having a charge co

Details Method of manufacturing an integrated circuit having a charge co Method of manufacturing an integrated circuit having a charge co

1994-03-14

1996-02-06

Fourson, George

Fishing, trapping, and vermin destroying

437 57, 437241, H01L 2170, H01L 2700, H01L 2102

Patent

active

054895456

ABSTRACT:
An integrated circuit comprises a charge coupled device and an MOS transistor. The charge coupled device has a lower and an upper gate electrode on the substrate. The insulating film between the substrate and the electrodes comprises silicon nitride. The insulating film between the electrodes is formed by thermal oxidizing the lower gate electrode using the silicon nitride film as a mask.

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