Method for making a high capacitance multi-level storage node fo

Details Method for making a high capacitance multi-level storage node fo Method for making a high capacitance multi-level storage node fo

1995-02-10

1996-02-06

Thomas, Tom

Fishing, trapping, and vermin destroying

437 60, 437915, H01L 218244

Patent

active

054895448

ABSTRACT:
A method for making high capacitance multi-level storage node contact is proposed for high density SRAMs. The proposed contact connects several poly levels to diffusion and to a trench capacitor, in one contact. The high storage node capacitance provided by the trench capacitor substantially reduces the soft error rate probability of the cell. The use of a single contact to connect several levels reduces the area. The contact preferably uses TiN as a barrier layer to reduce dopant diffusion between different poly layers.

REFERENCES:
patent: 4876215 (1989-10-01), Hsu
patent: 4890144 (1989-12-01), Teng et al.
patent: 4987090 (1991-01-01), Hsu et al.
patent: 4997783 (1991-03-01), Hsu
patent: 5016070 (1991-05-01), Sundaresan
patent: 5145799 (1992-09-01), Rodder
patent: 5179033 (1993-01-01), Adan
patent: 5187114 (1993-02-01), Chan et al.
patent: 5198683 (1993-03-01), Sivan
patent: 5204279 (1993-04-01), Chan et al.
"High Density SRAM Structure with a New Three-Dimensional, High- . . . " J. P. Gambino et al IBM Tech. Disc. Bul. V. 34 #2 Jul. 1991 pp. 255-258.
"High-Density CMOS SRAM Cell" W. H. Chang IBM Tech. Disc. Bulletin V. 34 #6 Nov. 1991 pp. 95-96.
"High Density Thin Film Transistor Load SRAM Cell Using Trench . . . " T. V. Rajeevakumar IBM Tech. Disc. Bul. V. 36 #09A Sep. 1993 pp. 581-582.

Affiliated with

Also associated with

Rating

Method for making a high capacitance multi-level storage node fo does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making a high capacitance multi-level storage node fo, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making a high capacitance multi-level storage node fo will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2174759