Microwave plasma etching apparatus

Details Microwave plasma etching apparatus Microwave plasma etching apparatus

1984-12-20

1985-12-17

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156643, 156646, 204192E, 204298, H01L 21306, C23F 103, B44C 122, C03C 1500

Patent

active

045591008

ABSTRACT:
A microwave plasma etching apparatus comprises: a discharge tube into which a discharge gas is supplied and which forms a discharge region; means for generating a magnetic field in the discharge region; means for bringing a microwave into the discharge region; and a stage for holding a material. In the present invention, the sample exists in the discharge region. On one hand, an area of a passage for draining particles to the outside from the discharge region is 5/16 or less of an area of the discharge region. For this purpose, for example, a diameter of the sample stage is 3/4 or more of a diameter of the discharge region.

REFERENCES:
patent: 4339326 (1982-07-01), Hirose
patent: 4462863 (1984-07-01), Nishimatsu et al.

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