Lateral charge control semiconductor device and method of fabric

Details Lateral charge control semiconductor device and method of fabric Lateral charge control semiconductor device and method of fabric

1987-01-15

1989-01-03

James, Andrew J.

357 55, 357 53, 357 238, H01L 2906, H01L 2978, H01L 2940

Patent

active

047960701

ABSTRACT:
A lateral charge control semiconductor device is disclosed wherein a plurality of gate filled trenches are disposed in side-by-side relation within a partially processed semiconductor wafer to define finger portions of a drain region therebetween. A field plate is disposed on the upper surface of the finger portions and a portion of the partially processed wafer is situated beneath the finger portions. Charge control can thus be provided to all surface of the finger portion of the lateral device to maximize the amount of charge control which can be applied to the device. More particularly, the carrier concentration within the finger portion can be increased to reduce the one-resistance of the device during forward conduction, while in a reverse blocking operation, lateral charge control can be applied to couple to the electric field originating with the ionized impurities situated in the drift/drain region to increase the breakdown voltage of the device.

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Hu, Chenming, "A Parametric Study of Power MOSFETS" 10th Power Electronics Specialists Conference, Record, Held Jan. 18-22, 1979, pp. 385-395.

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