Semiconductor device having a superlattice structure

Details Semiconductor device having a superlattice structure Semiconductor device having a superlattice structure

1986-02-11

1989-01-03

Edlow, Martin H.

357 16, 357 17, 357 237, 357 232, H01L 2712, H01L 3300

Patent

active

047960671

ABSTRACT:
A semiconductor device having a plurality of laminated semiconductor layers in which a current flows in the direction of lamination. A superlattice layer is formed in at least one of the layers and the potential of the quantum well of the superlattice layer is lower than the potential of the semiconductor layer in which the superlattice layer is formed. The potential of the barrier of the superlattice layer is higher than the potential of the semiconductor layer in which said superlattice layer is formed.

REFERENCES:
patent: 4525687 (1985-06-01), Chemla
patent: 4528464 (1985-07-01), Chemla
patent: 4644553 (1987-02-01), Van Ruyven

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