Method of etching indium tin oxide

Details Method of etching indium tin oxide Method of etching indium tin oxide

1975-05-02

1976-09-07

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Methods

96 362, 156 17, 252 792, C23F 102

Patent

active

039792404

ABSTRACT:
A method of etching a desired pattern in a layer of indium tin oxide formed on a substrate of a semiconductor or an insulating material in which the desired pattern is formed of a hardened photoresist on the layer of indium tin oxide and thereafter the substrate and the indium tin oxide layer with the hardened resist thereon is immersed in a solution of concentrated hydrobromic acid for a time sufficient to etch away the indium tin oxide unmasked by the hardened photoresist.

REFERENCES:
patent: 2371529 (1945-03-01), Loose
patent: 3121852 (1964-02-01), Boyd et al.
patent: 3348987 (1967-10-01), Stark et al.
Journal of the Electrochemical Society, A Chemical Polish for Snx Ploxi-x Te by J. Edward Coker, vol. 116, No. 7, 7/1969, p. 1021.

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