Method of making isolation grids in bodies of semiconductor mate

Details Method of making isolation grids in bodies of semiconductor mate Method of making isolation grids in bodies of semiconductor mate

1974-11-01

1976-09-07

Ozaki, G.

Metal treatment

Compositions

Heat treating

148171, 148172, 148187, 148175, 148177, 148179, 252 623GA, 252 623E, 357 48, H01L 21228

Patent

active

039792307

ABSTRACT:
An isolation grid is produced by the migration of a metal-rich liquid zone of material through a body of semiconductor material. Planar orientation of the surface through which migration is initiated, directions of wire alignment in the surface, wire sizes, direction of wire migration and simultaneous migration of intersecting liquid wires are disclosed herein. P-N junctions of the grid produced behind the migrated wires have substantially ideal voltage breakdown characteristics.

REFERENCES:
patent: 2813048 (1957-11-01), Pfann
patent: 3333166 (1967-07-01), Hochman
patent: 3560278 (1971-02-01), Sanera
patent: 3904442 (1975-09-01), Anthony et al.
Gansauge, "Junction Isolation in Germanium by Alloy Process", IBM Technical Disclosure, vol. 9, No. 6, Nov. 1966, p. 697.

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