Semiconductor integrated circuit fully isolated from the substra

Details Semiconductor integrated circuit fully isolated from the substra Semiconductor integrated circuit fully isolated from the substra

1993-08-27

1994-12-06

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257350, 257378, 257370, H01L 2706, H01L 27102, H01L 27105

Patent

active

053714016

ABSTRACT:
A mixed-type semiconductor integrated circuit device of a type wherein a semiconductor layer is formed on the surface of a semiconductor substrate with an insulating layer interposed therebetween and each of bipolar transistors and MISFETs is formed in the semiconductor layer. In the semiconductor integrated circuit device, a base insulating layer for each bipolar transistor formed in said semiconductor layer is fabricated in the form of a thin film thickness and a base insulating layer for each MISFET formed in said semiconductor layer is fabricated in the form of a thick film thickness.

REFERENCES:
patent: 5107321 (1992-04-01), Ilderem et al.
IBM Technical Disclosure Bulletin; "BiCMOS Isolation Technology using EPI Overgrowth . . . "; Jul. 1992 vol. 35 No. 21.
T. Tanaka et al., "Analysis of P+Poly Si Double-Gate Thin-Film Soi MOSFETs", IEDM, Tech. Dig. pp. 683-686, 1991.

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