Semiconductor diode

Details Semiconductor diode Semiconductor diode

1979-01-02

1981-07-14

Wojciechowicz, Edward J.

357 13, 357 30, 357 56, H01L 2900

Patent

active

042789869

ABSTRACT:
A semiconductor diode comprises an NPN or a PNP-three-layer structure of alternate conductivity type formed of three bordering semiconductor layers and having ohmic contacts. The diode is characterized in that in order to reduce the energy barrier, the central layer in the three-layer structure is selected in its thickness to be so thin that already without external electrode voltage applied to the ohmic contacts, with a given doping of the central layer, the entire central layer is depleted of free charge carriers.

REFERENCES:
patent: 4149174 (1979-04-01), Shannon
patent: 4167748 (1979-09-01), D'Angelo et al.

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