Radiation sensitive thyristor structure with isolated detector

Details Radiation sensitive thyristor structure with isolated detector Radiation sensitive thyristor structure with isolated detector

1975-11-03

1977-09-06

Lynch, Michael J.

357 30, 357 55, 357 58, 357 68, H01L 2974

Patent

active

040472191

ABSTRACT:
A radiation sensitive semiconductor device includes a light sensitive region and an independently selectable gate region isolated therefrom. High sensitivity in combination with large permissible light gathering areas are features.

REFERENCES:
patent: 3535532 (1970-10-01), Merryman
patent: 3697833 (1972-10-01), Nakata
patent: 3708732 (1973-01-01), Faust
patent: 3719863 (1973-03-01), Ogawa et al.
patent: 3736180 (1973-05-01), Fischer et al.
patent: 3737741 (1973-06-01), Bartelink et al.
patent: 3771029 (1973-11-01), Burtscher et al.
patent: 3858233 (1974-12-01), Miyata et al.
patent: 3888697 (1975-06-01), Bogus et al.
patent: 3893153 (1975-07-01), Page et al.
patent: 3946423 (1976-03-01), Augustine

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