Single crystal, heteroepitaxial, GaAlAs/CuInSe.sub.2 tandem sola

Batteries: thermoelectric and photoelectric – Photoelectric – Panel or array

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148 335, 357 30, 437 2, 437 5, H01L 3106, H01L 3118

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active

047955015

ABSTRACT:
Solar cells having high efficiency and high specific power are prepared in an "upside-down" process by depositing a lattice mismatch transition zone of ZnS.sub.x Se.sub.x and Cd.sub.y Zn.sub.1-y S.sub.z Se.sub.1-z on a CLEFT, double-heterostructure, single crystal, Ga.sub.a Al.sub.1-a As/GaAs thin film followed by deposition of a CuInSe.sub.2 thin film on the transition zone.

REFERENCES:
patent: 4536607 (1985-08-01), Wiesmann
patent: 4547622 (1985-10-01), Fan et al.
patent: 4681982 (1987-07-01), Yoshida
K. Zweibel et al., Conference Record, 18th IEEE Photovoltaic Specialists Conf. (1985), pp. 1393-1398.
K. Zweibel, C & E N, p. 46, Jul. 7, 1986.
J. C. C. Fan et al., Conference Record, 17th IEEE Photovoltaic Specialists Conf. (1984), pp. 31-35.
J. C. C. Fan, Solar Cells, vol. 12, pp. 51-62 (1984).
R. W. Birkmire et al., Proceedings, 6th E.C. Photovoltaic Solar Energy Conference (1985), Reidel Pub. Co., pp. 270-274.
R. W. Birkmire et al., Conference Record, 18th IEEE Photovoltaic Specialists Conf. (1985), pp. 1413-1416.
R. P. Gale et al., Conference Record, 18th IEEE Photovoltaic Specialists Conference (1985), pp. 296-299.

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