Method and means of directing an ion beam onto an insulating sur

Details Method and means of directing an ion beam onto an insulating sur Method and means of directing an ion beam onto an insulating sur

1977-07-01

1981-07-14

Weisstuch, Aaron

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

204298, G21K 504, C23C 1500

Patent

active

042788900

ABSTRACT:
A beam of ions is directed under control onto an insulating surface by supplying simultaneously a stream of electrons directed at the same surface in a quantity sufficient to neutralize the overall electric charge of the ion beam and result in a net zero current flow to the insulating surface. The ion beam is adapted particularly both to the implantation of ions in a uniform areal disposition over the insulating surface and to the sputtering of atoms or molecules of the insulator onto a substrate.

REFERENCES:
patent: 3472751 (1969-10-01), King
A. J. Weigand et al., "Ion-Beam-Sputter Modification of the Surface Morphology of Biological Implants," J. Vac. Sci. Tech., vol. 14, pp. 326-331 (1977).
R. G. Wilson et al., "Ion Beams-With Applications to Ion Implantation," J. Wiley & Sons, (1973), p. 320.
G. Carter et al., "Ion Implantation of Semiconductors," J. Wiley & Sons (1976), pp. 2-3.
G. Dearnaley et al., "Ion Implantation," North Holland Publishing Co. (1973), pp. 416-421 and 687-689.

Affiliated with

Also associated with

Rating

Method and means of directing an ion beam onto an insulating sur does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and means of directing an ion beam onto an insulating sur, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and means of directing an ion beam onto an insulating sur will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2166348