Sequentially annealed oxidation of silicon to fill trenches with

Details Sequentially annealed oxidation of silicon to fill trenches with Sequentially annealed oxidation of silicon to fill trenches with

1979-11-08

1981-07-14

Smith, John D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

357 49, 357 55, 427 96, 427255, 4272553, 4272554, 427379, H01L 21316, H01L 21324

Patent

active

042787050

ABSTRACT:
A process for making dielectrically isolated silicon integrated circuits which use silicon oxide filled trenches to provide isolation is described. To minimize damage to the silicon, the trenches are filled by sequentially annealed oxidation process which involves alternately growing some oxide and then annealing to relieve stresses before growing more oxide.

REFERENCES:
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patent: 3958040 (1976-05-01), Webb
patent: 3969162 (1976-07-01), Kuhn
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patent: 4042726 (1977-08-01), Kaji et al.
patent: 4079506 (1978-03-01), Suzuki et al.
patent: 4139658 (1979-02-01), Cohen et al.
patent: 4140548 (1979-02-01), Zimmer
patent: 4167915 (1979-09-01), Toole et al.
patent: 4199384 (1980-04-01), Hsu
Capell et al. "Process Refinements bring C-MOS on Sapphire into Commercial Use", Electronics, May 26, 1977, pp. 99-105.

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