Method for fabricating CMOS devices with guardband

Details Method for fabricating CMOS devices with guardband Method for fabricating CMOS devices with guardband

1982-06-10

1983-11-01

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29578, 29579, 148187, H01L 21265

Patent

active

044123752

ABSTRACT:
A CMOS process which provides a self-aligned guardband in a high density circuit is disclosed. A polysilicon masking member is used to define a well and also to provide alignment for the guardband. A single plasma etching step etches silicon nitride in one area and both silicon nitride and polysilicon in another area prior to growth of field oxides.

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patent: 4382827 (1983-05-01), Romano-Moran et al.
patent: 4385947 (1983-05-01), Halfacre et al.

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