Simultaneous location of areas having different conductivities

Details Simultaneous location of areas having different conductivities Simultaneous location of areas having different conductivities

1976-05-10

1977-09-06

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 148188, H01L 21225, H01L 2126

Patent

active

040466060

ABSTRACT:
The process employs both silicon dioxide and silicon nitride layers used for selectively masking areas to be etched in order to allow a single photomask to be used for defining areas having different conductivities simultaneously, thereby eliminating problems caused by misregistry between photomasks.

REFERENCES:
patent: 3673679 (1972-07-01), Carbajal et al.
patent: 3730778 (1973-05-01), Shannon et al.
patent: 3759763 (1973-09-01), Wang
patent: 3806371 (1974-04-01), Barone

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