Semiconductor switching device having plural MOSFET's, GTO's or

Details Semiconductor switching device having plural MOSFET's, GTO's or Semiconductor switching device having plural MOSFET's, GTO's or

1984-10-26

1987-09-08

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307570, 307575, 307577, H03K 17687, H03K 1760

Patent

active

046926437

ABSTRACT:
A semiconductor switching device includes a row of a plurality of switching elements connected in series. The input terminal of the input-nearest switching element and the output terminal of the output-nearest switching element are connected with the input terminal and output terminal of the semiconductor switching device, respectively. A control signal is applied to the control terminal of the output-nearest switching element. The semiconductor switching device comprises a first plurality of capacitive elements each of which is connected between the output terminal of the output-nearer switching element and the control terminal of the input-nearer switching element of the adjacent switching elements among the switching element row; and a second capacitive element connected between the output terminal and input terminal of the input-nearest switching element. At least the switching elements (S.sub.2 -S.sub.n) have insulating gates, respectively.

REFERENCES:
patent: 3095510 (1963-06-01), Lane
patent: 3202904 (1965-08-01), Madland
patent: 3891866 (1975-06-01), Okuhara et al.
patent: 4394590 (1983-07-01), Honda

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