Active solid-state devices (e.g. – transistors – solid-state diode – Voltage variable capacitance device
Patent
1995-12-14
1997-06-17
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Voltage variable capacitance device
257602, 257661, 257663, 505210, H01L 2993
Patent
active
056400420
ABSTRACT:
A voltage-variable ceramic capacitance device which has a plurality of las in a matching lattice structure and which possesses a symmetric voltage characteristic and a determinable voltage breakdown and has a high resistance to overbiasing or reverse biasing from an applied voltage. The device consists of a carrier substrate layer, a high temperature superconducting metallic layer deposited on the substrate, a thin film ferroelectric deposited on the metallic layer, and a plurality of metallic conductive means disposed on the thin film ferroelectric which are placed in electrical contact with RF transmission lines in tuning devices. The voltage breakdown of the device is easily designed by selecting the appropriate thickness of the ceramic, thus enabling a highly capacitive device that can be placed in a position of maximum standing wave voltage in a tuning circuit or tuning mechanism to provide a maximum effect on tunability, especially in high power applications, based on the changes in dielectric constant of the device.
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Babbitt Richard W.
Koscica Thomas E.
Wilber William D.
Anderson William H.
Ngo Ngan V.
The United States of America as represented by the Secretary of
Wilson Allan R.
Zelenka Michael
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