Method of testing semiconductor device

Details Method of testing semiconductor device Method of testing semiconductor device

1999-01-25

2000-12-12

Bowers, Charles

Semiconductor device manufacturing: process

With measuring or testing

438800, 438 17, H01L 2166

Patent

active

061597562

ABSTRACT:
A semiconductor device is tested without destroying a substrate immediately after a formation of a metal film and before patterning the metal film.
To this end, the substrate is first divided into a product region and a test pattern region. Next, an insulating film is formed on the substrate. Thereafter, openings are formed in the insulating film and on the product region and the test pattern region. Subsequently, the metal film is formed in the openings and on the insulating film. Finally, the metal film is patterned to form a wiring pattern.
Under these circumstances, a forming state of the metal film in the opening on the test pattern region is actually tested. Specifically, the presence or absence of a void is checked. In accordance with this test result, a forming state of the metal film in the opening in the product region is evaluated.

REFERENCES:
patent: 5514974 (1996-05-01), Bouldin
patent: 5607718 (1997-03-01), Sasaki et al.
patent: 5609775 (1997-03-01), Liu
patent: 5614114 (1997-03-01), Owen
patent: 5637186 (1997-06-01), Liu et al.
patent: 5661345 (1997-08-01), Wada et al.

Affiliated with

Also associated with

Rating

Method of testing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of testing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of testing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-215879