Lateral bipolar transistor

Details Lateral bipolar transistor Lateral bipolar transistor

1986-11-19

1988-10-04

Carroll, J.

357 4, 357 16, 357 34, 357 55, 357 56, 357 60, H01L 2972, H01L 29161, H01L 2712

Patent

active

047758821

ABSTRACT:
Silicon doping of GaAs provides n conductivity in {100} planes and p conductivity in {111} A planes. A split level of Si-doped GaAs utilizes this phenomena to provide a bipolar transistor. In one embodiment, the emitter is one level of the layer in the {100} planes, and the collector is another level of the layer in the {100} planes. These n conductivity levels are joined by {111} A planes to form a p conductivity base. The junctions in the layer between the {100} planes and the {111} A planes form an npn transistor.

REFERENCES:
patent: 4137543 (1979-01-01), Beneking
patent: 4677456 (1987-06-01), Feist
IBM Technical Disclosure Bulletin, "Metal-InAS Contact for Vertical Heterojunction Transistors", vol. 29, No. 5, Oct. 1986.

Affiliated with

Also associated with

Rating

Lateral bipolar transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Lateral bipolar transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lateral bipolar transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2158548