Semiconductor device formed in semi-insulative substrate

Details Semiconductor device formed in semi-insulative substrate Semiconductor device formed in semi-insulative substrate

1987-06-10

1988-10-04

James, Andrew J.

357 15, H01L 2980

Patent

active

047758783

ABSTRACT:
Disclosed is a semiconductor device having a field effect transistor (FET) formed in a semi-insulative substrate. A positive bias voltage equal to or higher than the bias voltage applied to the drain electrode of the FET is applied to a back surface electrode formed on the back surface of the substrate, with the result that the electrons generated within the semi-insulative substrate are pulled into the back surface electrode so as to prevent said electrons from flowing into the drain region and, thus, to prevent the drain current vibration.

REFERENCES:
patent: 4633282 (1986-12-01), Lee

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