Photon recycling light emitting diode

Details Photon recycling light emitting diode Photon recycling light emitting diode

1987-09-08

1988-10-04

Larkins, William D.

357 16, 357 4, H01L 3300

Patent

active

047758767

ABSTRACT:
A photon recycling light emitting diode consisting of a stack of direct bandgap semiconductor active layers on a substrate with increasing bandgap energy from the substrate, separated by barrier layers having higher bandgap energy and capped with a window layer having a bandgap energy higher than the active layers.

REFERENCES:
patent: 4438447 (1984-03-01), Copeland, III et al.
patent: 4476477 (1984-10-01), Capasso et al.
patent: 4568959 (1986-02-01), Chang et al.
patent: 4680602 (1987-07-01), Watanabe et al.
patent: 4694312 (1987-09-01), Yamazaki
Tsarenkov et al., "Red-Light Emitting Diodes Based on Variable-Gap Ga.sub.1-x Al.sub.x As:Si p-n Structures," Soviet Physics-Semiconductors, vol. 6, No. 5, (Nov. 1972), 793-7.

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