Low temperature shallow doping technique

Details Low temperature shallow doping technique Low temperature shallow doping technique

1986-07-28

1987-09-08

Smith, John D.

Fishing, trapping, and vermin destroying

437247, B05D 512

Patent

active

046923489

ABSTRACT:
A technique is described for producing very shallow doped regions in a substrate, at low temperatures. The doped regions are not in excess of about 300 angstroms in depth, and are formed at temperatures less than 700.degree. C. These shallow doped regions can be used in different applications, including the fabrication of semiconductor switching devices, diodes, and contacts. Overlayers containing the desired dopants are deposited on the substrate, after which an annealing step is carried out to institute the formation of a metallic compound. When the compound is formed, materials in the overlayers to be used as substrate dopants will be pushed ahead of the interface of the growing compound, and will be snowplowed into the top surface of the substrate, to produce the shallow doped region therein.

REFERENCES:
patent: 4293587 (1981-10-01), Trueblood
patent: 4362597 (1982-12-01), Fraser et al.

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