Fishing – trapping – and vermin destroying
Patent
1995-06-08
1997-06-17
Dang, Trung
Fishing, trapping, and vermin destroying
437 3, 437 39, 437176, 437974, H01L 3116
Patent
active
056396732
ABSTRACT:
An InP buffer layer is first formed upon an InP substrate; a thin layer of heavily doped InGaAs, a thick layer of light absorbing InGaAs, and a thin layer of InAlAs are thereafter sequentially grown upon the InP buffer layer. A light reflective Schottky barrier metallic layer is then applied to the InAlAs layer and the resulting device is inverted and affixed to a newly provided substrate, to thus shield and protect the sensitive Schottky contact. The InP substrate layers are thereafter removed and the now exposed thin, heavily doped InGaAs layer is coated with a transparent, electrically conductive layer of Indium-tin-oxide.
REFERENCES:
patent: 5053843 (1991-10-01), Choudhury et al.
patent: 5470761 (1995-11-01), McKee et al.
patent: 5472914 (1995-12-01), Martin et al.
patent: 5494833 (1996-02-01), Martin et al.
patent: 5532173 (1996-07-01), Martin et al.
Davis Andrew
Martin Eric A.
Spaziani Stephen M.
Vaccaro Kenneth
Dang Trung
Nathans Robert L.
The United States of America as represented by the Secretary of
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