Semiconductor wafer with dice having briding metal structure and

Details Semiconductor wafer with dice having briding metal structure and Semiconductor wafer with dice having briding metal structure and

1988-04-28

1989-05-30

James, Andrew J.

357 53, 357 52, 357 85, H01L 2940, H01L 2960, H01L 4900

Patent

active

048355925

ABSTRACT:
A monolithic semiconductor device and method of manufacturing same having improved high voltage performance. When the device is in wafer form, a metallization structure is formed over scribe zones which are disposed along the scribe lines which define the edge of each device. The scribe zones are normally not covered with oxide during conventional semiconductor fabrication so that an ohmic contact is formed with semiconductor body. The metal structure includes a peripheral section which extend around the active region of each device and extension sections which extend across the scribe lines and interconnect the peripheral sections. The metal structure clamps the voltage at the edge of each device, both prior and subsequent to wafer breaking, which prevents as depletion region created by a reverse-biased junction from extending to the edge of the device under high voltage conditions. As a result, high voltage performance is improved.

REFERENCES:
patent: 3436612 (1969-04-01), Grosvalet
patent: 3772576 (1973-11-01), Nienhuis et al.
patent: 4219827 (1980-08-01), Kaiser
patent: 4312011 (1982-01-01), Kanbayashi
patent: 4364078 (1982-12-01), Smith et al.
patent: 4625227 (1986-11-01), Hara et al.
patent: 4656055 (1987-04-01), Dwyer
Hibberd, Integrated Circuits, 1969, McGraw-Hill, New York, pp. 136-139.

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