1987-03-16
1989-05-30
James, Andrew J.
357 55, H01L 2978
Patent
active
048355844
ABSTRACT:
The specification describes a new MOS transistor structure in which the source gate and drain are formed within a trench in the semiconductor substrate. The gate width is determined by the depth of the trench and can be increased substantially without increasing the surface area occupied by the transistor. The result is a transistor with exceptionally high gain for a given surface area. Forming the transistor within and over a series of trenches further enhances this effect.
REFERENCES:
patent: 4324038 (1982-04-01), Chang et al.
patent: 4455740 (1984-06-01), Iwai
patent: 4536782 (1985-08-01), Brown
patent: 4710790 (1987-12-01), Okamoto
Salama, C.A.T., "A New Short Channel MOSFET Structure (UMOST)" in Solid State Electronics, vol. 20, No. 12, Dec. 1977, pp. 1003-1009.
Smith, D. A. et al, "A UMOS Power Field Effect Transistor" in Solid-State Electronics, vol. 23, No. 6, Jun. 1980, pp. 687-692.
American Telephone and Telegraph Company AT&T Bell Laboratories
James Andrew J.
Prenty Mark
Rehberg John T.
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