Semiconductor apparatus

Details Semiconductor apparatus Semiconductor apparatus

1986-03-13

1989-05-30

Edlow, Martin H.

357 16, H01G 2712

Patent

active

048355798

ABSTRACT:
A semiconductor apparatus is disclosed, in which the entire or part of an electron active region is formed by a superlattice structure semiconductor layer in which a plurality of different semiconductor layers, less than 8 monolayers, and containing a fraction or a binary compound semiconductor layers are alternately and epitaxially grown and a main current direction is selected to be in the direction perpendicular to the laminae of said superlattice layers.

REFERENCES:
patent: 3893044 (1975-07-01), Dumke et al.
patent: 4122407 (1978-10-01), Van Vechten
patent: 4511408 (1985-04-01), Holonyak, Jr.
patent: 4599728 (1986-07-01), Alavi
Solid-State Superlattices, by Gottfried H. Dohler, Scientific American, Nov. 1983 issue, pp. 118-126.

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