Silicon as donor dopant in Hg.sub.1-x Cd.sub.x Te

Details Silicon as donor dopant in Hg.sub.1-x Cd.sub.x Te Silicon as donor dopant in Hg.sub.1-x Cd.sub.x Te

Filed on

1977-01-06

Date issued

1978-05-02

Examiner

Ozaki, G.

Patent Class

Metal treatment

SubClass

Barrier layer stock material, p-n type

Other Related Categories

148187, 252 623ZT, H01L 3100

Type

Patent

Status

active

Patent number

040872939

Description

ABSTRACT:
Mercury cadmium telluride is described having a quantity of a silicon dispersed therein in an amount to measurably increase the donor concentration of the mercury cadmium telluride. Silicon has been found to substitute for metal, either mercury or cadmium, in the mercury cadmium telluride crystal. Doping of a region of mercury cadmium telluride with silicon can produce a PN junction when the adjacent region is P-type, and an N-N+ type junction when the adjacent region is N-type.

REFERENCES:
patent: 3312571 (1967-04-01), Ruehrwein
patent: 3740690 (1973-06-01), Scharnhorst
patent: 3767471 (1973-10-01), Kasper
patent: 3925147 (1975-12-01), Kimura
patent: 3949223 (1976-04-01), Schmit et al.

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