Method of manufacturing Group III-V compound semiconductor solar

Details Method of manufacturing Group III-V compound semiconductor solar Method of manufacturing Group III-V compound semiconductor solar

1987-12-18

1988-10-04

Weisstuch, Aaron

Fishing, trapping, and vermin destroying

136262, 148DIG66, 437119, 437133, H01L 3118

Patent

active

047756390

ABSTRACT:
After a liquid-phase epitaxial growth step by an n-type GaAs saturated solution is terminated, a substrate is temporarily dipped in an undoped GaAs saturated or supersaturated solution, and thereafter liquid-phase epitaxial growth is performed by a p-type Al.sub.x Ga.sub.1-x As saturated solution. Thus, the n-type GaAs saturated solution is prevented from being mixed into the p-type Al.sub.x Ga.sub.1-x As saturated solution to contaminate the same, whereby a solar battery of high quality can be obtained even if the number of times of crystallization is increased.

REFERENCES:
patent: 4126930 (1978-11-01), Moon
patent: 4178195 (1979-12-01), Hovel et al.
patent: 4235651 (1980-11-01), Kamath et al.
J. M. Woodall et al, "LPE Growth of GaAs-Ga.sub.1-x Al.sub.x As Solar Cells", J. Crystal Growth, vol. 39, pp. 108-116 (1977).

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