Charged particle beam apparatus

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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250396R, H01J 2700

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active

048353990

ABSTRACT:
Positive and negative particles are emitted from the same emission portion of a charged particle source. In a charged particle optical system, the ions or electrons having a particularly energy among the emitted charged particles are selectively passed and their blanking is performed. The magnetic field strength and electric strength in the charged particle optical system are preferably controlled by an E.times.B type mass separator or quadrupole mass separator provided in the charged particle optical system.

REFERENCES:
patent: 3117022 (1964-01-01), Bronson et al.
patent: 4315153 (1982-02-01), Vahrenkamp
patent: 4457803 (1984-07-01), Takigawa
patent: 4476393 (1984-10-01), Taya
patent: 4486664 (1984-12-01), Wollnik
patent: 4609809 (1986-09-01), Yamaguchi et al.
patent: 4641034 (1987-02-01), Okamura et al.
patent: 4697086 (1987-09-01), Ishitami et al.l
"Maskless Ion Implantation Tech.: Be and Si Implantation in GaAs", Hashimoto et. al., Japanese Journal Oyo Butsuri (Applied Physics), vol. 53, No. 8 (1984) pp. 704-708 (not translated).

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