Method for producing MOS semiconductor device

Details Method for producing MOS semiconductor device Method for producing MOS semiconductor device

1980-12-18

1982-09-14

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148188, 29571, 29576B, H01L 21225, H01L 2126

Patent

active

043493955

ABSTRACT:
A metal layer of a metal-insulator-semiconductor type semiconductor device, e.g., a metal electrode on an oxide layer covering a semiconductor substrate of an MOS diode or an MOS FET, contains at least one cation-trapping element. The semiconductor substrate with the metal layer and the oxide layer is heated at an elevated temperature to diffuse some of the ions responsible for the cation-trapping element out of the metal layer and into the upper part of the oxide layer. The metal and oxide layers promote the surface passivation of the semiconductor device.

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