Static information storage and retrieval – Floating gate – Particular biasing
Patent
1990-08-31
1993-02-16
Dixon, Joseph L.
Static information storage and retrieval
Floating gate
Particular biasing
365218, G11C 1604
Patent
active
051876833
ABSTRACT:
A method is described for programming a semiconductor array of EEPROM cells. A selected cell is connected, by definition, to a selected source-column line, a selected drain-column line and a selected wordline. Each deselected memory cell in the array is connected to a deselected source-column line, a deselected drain-column line and/or a deselected wordline. The method includes preselecting first, second, third, fourth and fifth programming voltages such that the second programming voltage is more positive than the first programming voltage and such that the third, fourth and fifth programming voltages are intermediate between the first and second programming voltages. The first programming voltage is applied at least to a selected column line and to each of the same-type deselected column lines. The third programming voltage is applied to the selected wordline and the fourth programming voltage is applied to each deselected wordline. After a pre-charge time interval, the fifth programming voltage is applied to each same-type deselected column line and, after an optional additional pre-charge time interval, the second programming voltage is applied to the selected wordline. After a program time interval, the third programming voltage is applied to the selected wordline and, after an optional discharge time interval, the first programming voltage is applied to each same-type deselected column line. Each deselected wordline is maintained at the fourth programming voltage for an additional discharge time interval. The third, fourth and fifth programming voltages may have the same value.
REFERENCES:
patent: 4858194 (1989-08-01), Terada et al.
patent: 5047981 (1991-09-01), Gill et al.
patent: 5060195 (1991-10-01), Gill et al.
D'Arrigo Sebastiano
Gill Manzur
Lin Sung-Wei
Dixon Joseph L.
Donaldson Richard L.
Heiting Leo N.
Lane Jack A.
Lindgren Theodore D.
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