Fishing – trapping – and vermin destroying
Patent
1987-12-07
1989-05-30
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 67, 437 69, H01L 21265
Patent
active
048351156
ABSTRACT:
A method of forming trench isolation is disclosed. A trench is etched, either through field oxide or not, into the substrate, using an oxide hard mask. Implant of a channel-stop is then performed through a dummy sidewall oxide, followed by stripping of the dummy oxide and regrowth of the sidewall oxide. A polysilicon layer is deposited into the trench and over the wafer, and is etched to clear from the surface, and overetched so that a recess is formed within the trench. The recess is then filled with a TEOS oxide layer deposited over the wafer surface, and the deposited oxide at the top of the trench is planarized with the surrounding surface.
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Yamada et al., "A Deep-Trenched Capacitor Technology for 4 Mega Bit Dynamic Ram", IEDM (1985), pp. 702-705.
Anderson Rodney M.
Chaudhuri Olik
Heiting Leo N.
Sharp Melvin
Texas Instruments Incorporated
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