Coating processes – Direct application of electrical – magnetic – wave – or... – Pretreatment of coating supply or source outside of primary...
Patent
1993-10-22
1994-08-09
Padgett, Marianne
Coating processes
Direct application of electrical, magnetic, wave, or...
Pretreatment of coating supply or source outside of primary...
427571, 427575, 156643, 156635, 21912159, B05D 306, B44C 122, B23K 900
Patent
active
053365330
ABSTRACT:
Apparatus and methods for forming a source of dissociated and excited molecules from a working gas-plasma interaction for use in treating substrates such as hydrogen passivation of semiconductors. A plasma is generated under resonant conditions and confined in a reaction chamber by a magnetic mirror trap. The working gas is injected into the reaction chamber to intersect the confined plasma. The interaction forms a neutral species of dissociated and excited molecules and a charged species of ions and electrons. A multipole magnetic field is used to stabilize the plasma and maintain the charged particles of the plasma and the charged species away from the reaction chamber. The charged species is confined to the plasma by the net magnetic field so that the neutral species flows out of the reaction chamber for processing of substrates, e.g., hydrogenation of semiconductor materials. Two sources are used to which produce two axially opposing and aligned electron cyclotron resonance (ECR) plasma streams that meet in a reaction chamber disposed between the two resonators.
REFERENCES:
patent: 4113514 (1978-07-01), Pankove et al.
patent: 4224084 (1980-09-01), Pankove
patent: 4532199 (1985-07-01), Meno et al.
patent: 4609428 (1986-09-01), Fujimura
patent: 4818488 (1989-04-01), Jacob
patent: 4891095 (1990-01-01), Ishida et al.
patent: 4898118 (1990-02-01), Murakami et al.
patent: 4952273 (1990-08-01), Popov
patent: 5038713 (1991-08-01), Kanakami et al.
patent: 5196670 (1993-03-01), Mantei
patent: 5203960 (1993-04-01), Dandl
Popov et al., "Electron Cyclotron Resonance Plasma Stream Source For Plasma Enhanced Chemical Vapor Deposition" J. Vac. Technol. A7(3) May/Jun. 1989 pp. 914-917.
Balmashnov et al., "Passivation of GaAs by Atomic Hydrogen Flow Produced by the Crossed Beams Method" Semicond. Sci. Technol, 5 (1990) pp. 242-245.
Omeljanovsky et al. "Hydrogen Passivation of Defects and Impurities GaAs and InP" J. Electronic Materials, vol. 18, No. 6, 1989 pp. 659-670.
Balmashnov et al. "CERA-C: The System For Hydorgenation of Semi-conductors by the method of Crossed Beams:," Contributed Papers of XX International Conference on phenomena in ionized Bases, Pisa, Italy, Jul. 1991.
Polyakov, et al. "The Effect of Hydrogen On Bulk And Surface Traps In Indium Antimonide", Solid State Communications, vol. 74, No. 8, pp. 711-715 (1990) no month.
Polyakov et al. "Atomic Hydrogen Passivation of Deep Levels Activity In Al.sub.x Ga.sub.1-x A.sub.s Multiquantum Well Structures". Solid State Communications vol. 76, No. 6, pp. 761-763 (1990). No month.
Pakhomov et al., "Atomic Hydrogen Modification of Polycrystalline Silicon Solor Cells Characteristics", Solid State Communications, vol. 76, No. 7, pp. 887-890 (1990) No month.
Barbour et al. "Silicon Nitride Formation from a Silane-Nitrogen Electron Cyclotron Resonance Plasma", J. Vac. Sci. Technol-A, vol. 9, No. 3, May/Jun. 1991, pp. 480-484.
Know et al. "Characterization of Electronic and Optical Properties of Device Quality a-Si:H and a-(Si,Ge): H grown by remote plasma electron cyclotron Resonance deposition", J. Vac. Sci Technol A, vol. 9, No. 3, May/Jun. 1991 pp. 474-479.
Popov, "Effects of Magnetic Field and Microwave Power on Electron Cyclotron Resonance Type plasma characteristics" J. Vac. Sci. Technol A, vol. 9, No. 3, May/Jun. 1991 pp. 711-716.
Conrad et al., "Plasma source ion-implantation technique for Surface Modification of Materials", J. Appl. Phy., vol. 62, No. 11, Dec. 1, 1987, pp. 4591-4596.
Hirano et al. "Extension of Bearing Endurance Life By Ion Implantation" Appl. Phys. Lett., vol. 49, No. 13, Sep. 29, 1986, pp. 779-781.
Garner et al. "An Inexpensive X-ray Source Based On An Electron Cyclotron" Rev. Sci Instrum. 61(2), Feb. 1990, pp. 724-727.
Brynjolfsson "Factors Influencing Economic Evaluation Of Irradiation Processing" Factors Influencing The Economical Application Of Food Irradiation Symposium Proceeding, Jun. 14-18 1971, 1973, pp. 13-35.
Popov , "An Electron Cyclotron Plasma Stream Source For Low Pressure Thin Film Production" Surface and Coatings Technology, 36 (1988) pp. 917-925.
Popov "Electron Cyclotron Resonance Plasmas Excited By Rectangular and Circular Microwave Modes" J. V. Sci. Technical A 8(3) May/Jun. 1990.
Popov et al., "Electron Cyclotron Resonance Sources For Wide and Narrow Plasma Streams", Rev. Sci. Instrum., 61(1), Jan. 1990 pp. 303-305.
Product Literature for ECR System 9200, Plasma Stream Sources Models 904, 904GR, 906, 906GR, 908. ECR Ion Miller Model 1M601, ECRJr. Research System, Micromagnitrons, Micro 1000 Heater, Researcher 101, ECR Retrofit by Microscience, nine single pages and one tri-fold document. date unknown.
Shapoval et al., "Cubic Boron Nitride Films Deposited by Electron Cyclotron Resonance Plasma" Appl. Phys. Lett. 57(18), Oct. 29, 1990, pp. 1885-1886.
Balmashnov Alexander A.
Golovanivsky Konstantin S.
Omeljanovsky Erzam M.
Pakhomov Andrew V.
Polyakov Alexander Y.
Padgett Marianne
Ruxam, Inc.
LandOfFree
Method and apparatus for the production of a dissociated atomic does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for the production of a dissociated atomic , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for the production of a dissociated atomic will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-215094