Multiple-layer growth of plural semiconductor devices

Coating apparatus – With heat exchange – drying – or non-coating gas or vapor...

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118404, 118412, 118425, H01L 21208

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active

047749040

ABSTRACT:
Horizontal slider for the fabrication of semiconductor devices employs a succession of reservoirs and wells for successive applications of material in the growing of multiple layer semiconductor devices. The apparatus is composed of three assemblies each of which is fabricated of graphite to avoid contamination of the semiconductor material. The apparatus is operated within a furnace wherein the temperature is varied between a relatively high temperature for providing saturated solutions, to a lower temperature during which epitaxial growth can occur, and ambient temperature for completion of a fabrication procedure. One of the assemblies contains a set of wells, a second assembly contains reservoirs and slides horizontally upon the assembly of wells for alternately communicating reservoirs with wells and terminating such communication for a filling of the wells with requisite melts. The third assembly is a set of bars having recesses for carrying substrates, the bars being slid through channels in walls of the first assembly to advance the substrate sequentially from well to well for simultaneous growth of layers upon a plurality of substrates.

REFERENCES:
patent: 4406245 (1983-09-01), Heinen
patent: 4592304 (1986-06-01), Hager et al.

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