Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1980-04-11
1982-09-14
Ozaki, G.
Metal working
Method of mechanical manufacture
Assembling or joining
29578, 29590, 148 15, 148187, 148188, H01L 21208, H01L 2126, H01L 2128
Patent
active
043488021
ABSTRACT:
In a process for producing a semiconductor device, particularly an MIS structure semiconductor device, an electrode, which is in ohmic contact with the semiconductor substrate, is usually formed on the surface which is opposite to the surface having MIS FETs. However, in a recently developed process, the electrode mentioned above is formed on the semiconductor substrate surface on which the MIS FETs are formed, and the electrode is in ohmic contact with the substrate through a short-circuit of a PN junction formed on such semiconductor substrate surface. However, a so formed electrode is liable to break. In the present invention, wherein a masking layer covers the substrate-contact region during the production of the MIS FETs, the electrode mentioned above is in an ohmic contact with the electrode not through the PN junction and the problem of breaking occurs seldom.
REFERENCES:
patent: 3793721 (1974-02-01), Wakefield et al.
patent: 3881242 (1975-05-01), Nuttall et al.
patent: 4013489 (1977-03-01), Oldham
patent: 4039358 (1977-08-01), Kitajima et al.
patent: 4109372 (1978-08-01), Geffken
patent: 4221045 (1980-09-01), Godejahn
Soderman, IBM Technical Disclosure Bulletin, vol. 21, No. 3, Aug. 1978, pp. 1127 and 1128.
Fijitsu Limited
Ozaki G.
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